EBE21FE8ACWR

The EBE21FE8ACFT is a kind of Advanced Memory Buffer (AMB) reference design complies with the FB-DIMM Architecture and Protocol Specification. It supports DDR2 SDRAM main memory. The AMB interface is responsible for handling FB-DIMM channel and memory requests to and from the local DIMM and for forwarding requests to other DIMMs on the FB-DIMM channel. The FB-DIMM provides a high memory bandwidth, large capacity channel solution that has a narrow host interface. FB-DIMMs use commodity DRAMs isolated from the channel behind a buffer on the DIMM. The memory capacity is 288 devices per channel and total memory capacity scales with DRAM bit density. The AMB is the buffer that isolates the DRAMs from the channel. The AMB allows buffering of memory traffic to support large memory capacities. All memory control for the DRAM resides in the host, including memory request initiation, timing, refresh, scrubbing, sparing, configuration access, and power management.

The features of EBE21FE8ACFT can be summarized as (1)JEDEC standard raw card B design; (2)industry standard advanced memory buffer (AMB); (3)high-speed differential point-to-point link interface at 1.5V (JEDEC spec) -14 north-bound (NB) high speed serial lanes -10 south-bound (SB) high speed serial lanes; (4)various features/modes: -MemBIST and IBIST test functions -Transparent mode and direct access mode for DRAM testing; (5)interface for a thermal sensor and status indicator; (6)channel error detection and reporting; (7)automatic DDR2 SDRAM bus and channel calibration; (8)SPD (serial presence detect) with 1 piece of 256 byte serial EEPROM.

The absolute maximum ratings of EBE21FE8ACFT are (1)voltage on any pin relative to VSS VIN/VOUT: -0.3 to +1.75 V; (2)AMB core power voltage relative to VSS VCC: -0.3 to +1.75 V; (3)DRAM interface power voltage relative to VSS VDD: -0.5 to +2.30 V; (4)termination voltage relative to VSS VTT: -0.5 to +2.30 V; (5)storage temperature Tstg: -55 to +100 °C.