EBE21FE8ACFT

SpecificationsDensity: 2GB Organization-256M words x 72 bits, 2 ranks Mounting 18 pieces of 1G bits DDR2 SDRAM sealed in FBGA Package-240-pin fully buffered, socket type dual in line memory module (FB-DIMM)PCB height: 30.35mmLead pitch: 1.0mm-Advanced Memory Buffer (AMB): 655-ball FCBGA-Lead...

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SeekIC No. : 004331030 Detail

EBE21FE8ACFT: SpecificationsDensity: 2GB Organization-256M words x 72 bits, 2 ranks Mounting 18 pieces of 1G bits DDR2 SDRAM sealed in FBGA Package-240-pin fully buffered, socket type dual in line memory mo...

floor Price/Ceiling Price

Part Number:
EBE21FE8ACFT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Specifications

  • Density: 2GB
  • Organization
    -256M words x 72 bits, 2 ranks
  • Mounting 18 pieces of 1G bits DDR2 SDRAM sealed in FBGA
  • Package
    -240-pin fully buffered, socket type dual in line memory module (FB-DIMM)
    PCB height: 30.35mm
    Lead pitch: 1.0mm
    -Advanced Memory Buffer (AMB): 655-ball FCBGA
    -Lead-free (RoHS compliant)
  • Power supply
    -DDR2 SDRAM: VDD = 1.8V +/- 0.1V
    -AMB: VCC = 1.5V +0.075V/-0.045
  • Data rate: 667Mbps (max.)
  • Eight internal banks for concurrent operation (components)
  • Interface: SSTL_18
  • Burst lengths (BL): 4, 8
  • /CAS Latency (CL): 3, 4, 5
  • Precharge: auto precharge option for each burst access
  • Refresh: auto-refresh, self-refresh
  • Refresh cycles: 8192 cycles/64ms
    -Average refresh period
    7.8 µs at 0'C <= TC <= +85'C
    3.9 µs at +85'C < TC <= +95'C
  • Operating case temperature range
    -TC = 0'C to +95'C





  • Description

    The EBE21FE8ACFT is a kind of Advanced Memory Buffer (AMB) reference design complies with the FB-DIMM Architecture and Protocol Specification. It supports DDR2 SDRAM main memory. The AMB interface is responsible for handling FB-DIMM channel and memory requests to and from the local DIMM and for forwarding requests to other DIMMs on the FB-DIMM channel. The FB-DIMM provides a high memory bandwidth, large capacity channel solution that has a narrow host interface. FB-DIMMs use commodity DRAMs isolated from the channel behind a buffer on the DIMM. The memory capacity is 288 devices per channel and total memory capacity scales with DRAM bit density. The AMB is the buffer that isolates the DRAMs from the channel. The AMB allows buffering of memory traffic to support large memory capacities. All memory control for the DRAM resides in the host, including memory request initiation, timing, refresh, scrubbing, sparing, configuration access, and power management.

    The features of EBE21FE8ACFT can be summarized as (1)JEDEC standard Raw Card B Design; (2)industry standard advanced memory buffer (AMB); (3)high-speed differential point-to-point link interface at 1.5V (JEDEC spec); (4)14 north-bound (NB) high speed serial lanes; (5)10 south-bound (SB) high speed serial lanes; (6)various features/modes:; (7)memBIST and IBIST test functions; (8)transparent mode and direct access mode for DRAM testing; (9)interface for a thermal sensor and status indicator; (10)channel error detection and reporting; (11)automatic DDR2 SDRAM bus and channel calibration; (12)SPD (serial presence detect) with 1piece of 256 byte serial EEPROM.

    The absolute maximum ratings of EBE21FE8ACFT are (1)voltage on any pin relative to VSS VIN/VOUT: 0.3 to +1.75 V; (2)AMB core power voltage relative to VSS VCC: 0.3 to +1.75 V; (3)DRAM interface power voltage relative to VSS VDD: 0.5 to +2.30 V; (4)termination voltage relative to VSS VTT: 0.5 to +2.30 V; (5)storage temperature Tstg: 55 to +100 °C.






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