EBD11UD8ADDA-E

Features: • 200-pin socket type small outline dual in line memory module (SO-DIMM) -PCB height: 31.75mm -Lead pitch: 0.6mm -Lead-free • 2.5V power supply • Data rate: 333Mbps/266Mbps (max.) • 2.5 V (SSTL_2 compatible) I/O • Double Data Rate architecture; two data tran...

product image

EBD11UD8ADDA-E Picture
SeekIC No. : 004330930 Detail

EBD11UD8ADDA-E: Features: • 200-pin socket type small outline dual in line memory module (SO-DIMM) -PCB height: 31.75mm -Lead pitch: 0.6mm -Lead-free • 2.5V power supply • Data rate: 333Mbps/266Mb...

floor Price/Ceiling Price

Part Number:
EBD11UD8ADDA-E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/25

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 200-pin socket type small outline dual in line memory module (SO-DIMM) 
        -PCB height:  31.75mm 
        -Lead pitch:  0.6mm 
        -Lead-free
• 2.5V power supply
• Data rate: 333Mbps/266Mbps (max.)
• 2.5 V (SSTL_2 compatible) I/O
• Double Data Rate architecture; two data transfers per clock cycle 
• Bi-directional, data strobe (DQS) is transmitted /received with data, to be used in capturing data at the receiver 
• Data inputs, outputs and DM are synchronized with DQS 
• 4 internal banks for concurrent operation  (Components)
• DQS is edge aligned with data for READs; center aligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK transitions
• Commands entered on each positive CK edge; data referenced to both edges of DQS
• Data mask (DM) for write data
• Auto precharge option for each burst access
• Programmable burst length:  2, 4, 8
• Programmable /CAS latency (CL):  2, 2.5
• Refresh cycles:  (8192 refresh cycles /64ms) 
        -7.8µs maximum average periodic refresh interval
• 2 variations of refresh 
        -Auto refresh 
        -Self refresh



Specifications

Parameter Symbol Value Unit Note
Voltage on any pin relative to VSS VT 1.0 to +3.6 V  
Supply voltage relative to VSS VDD 1.0 to +3.6 V  
Short circuit output current IOS 50 mA  
Power dissipation PD 8 W  
Operating ambient temperature TA 0 to +70 1
Storage temperature Tstg -55 to +125  



Description

The EBD11UD8ADDA is  128M  words  × 64  bits, 2 ranks Double Data Rate (DDR) SDRAM Small Outline Dual In-line Memory Module, mounting 16 pieces of 512M bits DDR SDRAM sealed in TCP package.  Read and write operations are performed at the cross points of the CK and the /CK.  This high-speed data transfer EBD11UD8ADDA is realized by the 2 bits prefetch-pipelined architecture Data strobe (DQS) both for read and write are available for high speed and reliable data bus design.  By setting extended mode register, the on-chip Delay Locked Loop (DLL) can be set enable or disable.  This module provides high density mounting without utilizing surface mount technology.  Decoupling capacitors are mounted beside each TCP on the module board.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Crystals and Oscillators
Static Control, ESD, Clean Room Products
Memory Cards, Modules
Test Equipment
Resistors
View more