MOSFET 250mW 60Vdss
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.115 A | ||
Resistance Drain-Source RDS (on) : | 6000 mOhms at 5 V | Configuration : | Dual | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-363 | Packaging : | Reel |
Technical/Catalog Information | DMN66D0LDW-7 |
Vendor | Diodes Inc (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 N-Channel (Dual) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 115mA |
Rds On (Max) @ Id, Vgs | 6 Ohm @ 115mA, 5V |
Input Capacitance (Ciss) @ Vds | 23pF @ 25V |
Power - Max | 250mW |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | - |
Package / Case | SC-70-6, SC-88, SOT-323-6, SOT-363 |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | DMN66D0LDW 7 DMN66D0LDW7 DMN66D0LDWDICT ND DMN66D0LDWDICTND DMN66D0LDWDICT |