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DMN600V

Features: Dual N-Channel MOSFETLow On-ResistanceLow Gate Threshold VoltageLow Input CapacitanceFast Switching Speed Low Input/Output LeakageUltra-Small Surface Mount PackageLead Free By Design/RoHS Compliant (Note 3)Specifications Characteristic Symbol DMDT9922 Unit Drain-Sour...

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SeekIC No. : 004327686 Detail

DMN600V: Features: Dual N-Channel MOSFETLow On-ResistanceLow Gate Threshold VoltageLow Input CapacitanceFast Switching Speed Low Input/Output LeakageUltra-Small Surface Mount PackageLead Free By Design/RoHS ...

DMN600V Data Sheet

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Part Number:
DMN600V
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 3)


Specifications

Characteristic

Symbol

DMDT9922

Unit

Drain-Source Voltage

VDSS

60

V

Drain-Gate Voltage RGS 1.0M

VDGR

60

V

Gate-Source Voltage (Note 3)Continuous Pulsed

VGSS

±20
±40

V

Drain Current (Note 3) Continuous

ID

280

mA

Drain Current (Note3) Pulsed

IDM

1.5

A

Total Power Dissipation Pd 150 mW

Thermal Resistance, Junction to Ambient

RJA

833

/W

Operating and Storage Temperature Range

Tj,TSTG

-55 to +150






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