MOSFET P-CHANNEL ENHANCEMENT MODE
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 4 A | ||
Resistance Drain-Source RDS (on) : | 42.5 mOhms at 4.5 V | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-23 | Packaging : | Reel |
Technical/Catalog Information | DMG3415U-7 |
Vendor | Diodes Inc (VA) |
Category | Undefined Category |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | DMG3415U 7 DMG3415U7 DMG3415UDIDKR ND DMG3415UDIDKRND DMG3415UDIDKR |