MOSFET N-Ch 20V VDSS 8 Vgss 30A IDM
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 4.2 A | ||
Resistance Drain-Source RDS (on) : | 25 mOhms at 4.5 V | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-23 | Packaging : | Reel |