Features: ` Small Chip 230 x 230 x 85 m` UT LED Performance` 5.5 mW min. (455475 nm) Blue` 2.5 mW min. (500-510 nm) Traffic Green` 2.5 mW min. (520-535 nm) Green` Low Forward Voltage` 2.93.0 V Typical at 5 mA` Single Wire Bond Structure` Class 2 ESD RatingApplication· Mobile Phone Keypads· Audio ...
CxxxUT230-S0002: Features: ` Small Chip 230 x 230 x 85 m` UT LED Performance` 5.5 mW min. (455475 nm) Blue` 2.5 mW min. (500-510 nm) Traffic Green` 2.5 mW min. (520-535 nm) Green` Low Forward Voltage` 2.93.0 V Typi...
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Features: ` EZBright LED Technology -200 mW min. - 450, 460 & 470 nm -300 mW min. - 450, 460 &...
Features: ·EZBright LED Rf Performance-460 & 470 nm -EZ-18™ - 18 mW min. (470 nm only) -...
Features: ` Small Chip 230 x 230 x 85 m` Low Forward Voltage` 3.3V Typical at 20 mA` UT LED Perfo...
DC Forward Current | 30 mA |
Peak Forward Current (1/10 duty cycle @ 1 kHz) | 100 mA |
LED Junction Temperature | 125°C |
Reverse Voltage | 5 V |
Operating Temperature Range | -40°C to +100°C |
Storage Temperature Range | -40°C to +100°C |
Electrostatic Discharge Threshold (HBM) Note 2 | 1000 V |
Electrostatic Discharge Classification (MIL-STD-883E) Note 2 | Class 2 |
Cree's UltraThin LEDs CxxxUT230-S0002 combine highly efficient InGaN materials with Cree's proprietary G•SiC® substrate to deliver uperior price/performance for blue and green LEDs. These vertically structured LED chips are small in size and equire a low forward voltage. Cree's UT™ series chips are tested for conformity to optical and electrical specifications nd the ability to withstand 1000 V ESD. Applications include keypad backlighting where sub-miniaturization and hinner form factors are required.