Specifications SYMBOL CQ89DS CQ89MS CQ89NS UNITS 400 600 800 V Peak Repetitive Off-State VoltageRMS On-State Current (TC=80oC)Peak One Cycle Surge (10ms)Peak Gate CurrentAverage Gate Power DissipationStorageTemperatureJunction TemperatureThermal Resistance VDRMIT(RMS)...
CQ89MS: Specifications SYMBOL CQ89DS CQ89MS CQ89NS UNITS 400 600 800 V Peak Repetitive Off-State VoltageRMS On-State Current (TC=80oC)Peak One Cycle Surge (10ms)Peak Gate CurrentA...
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SYMBOL |
CQ89DS | CQ89MS | CQ89NS |
UNITS | |
400 | 600 | 800 |
V | ||
Peak Repetitive Off-State Voltage RMS On-State Current (TC=80oC) Peak One Cycle Surge (10ms) Peak Gate Current Average Gate Power Dissipation StorageTemperature Junction Temperature Thermal Resistance |
VDRM IT(RMS) ITSM IGM PG(AV) Tstg TJ J-C |
2.0 10 1.0 0.1 -45 to +150 -45 to +125 10 |
A A A W oC oC oC/W |
The CENTRAL SEMICONDUCTOR CQ89DS series types are epoxy molded silicon triacs designed for full wave AC control applications featuring gate triggering in all four (4) quadrants.