Specifications SYMBOL CQ89D CQ89M CQ89N UNITS 400 600 800 V Peak Repetitive Off-State VoltageRMS On-State Current (TC=80oC)Peak One Cycle Surge (10ms)Peak Gate CurrentAverage Gate Power DissipationStorageTemperatureJunction TemperatureThermal Resistance VDRMIT(RMS)ITS...
CQ89D: Specifications SYMBOL CQ89D CQ89M CQ89N UNITS 400 600 800 V Peak Repetitive Off-State VoltageRMS On-State Current (TC=80oC)Peak One Cycle Surge (10ms)Peak Gate CurrentAver...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
SYMBOL |
CQ89D | CQ89M | CQ89N |
UNITS | |
400 | 600 | 800 |
V | ||
Peak Repetitive Off-State Voltage RMS On-State Current (TC=80oC) Peak One Cycle Surge (10ms) Peak Gate Current Average Gate Power Dissipation StorageTemperature Junction Temperature Thermal Resistance |
VDRM IT(RMS) ITSM IGM PG(AV) Tstg TJ J-C |
2.0 10 1.0 0.1 -45 to +150 -45 to +125 10 |
A A A W oC oC oC/W |
The CENTRAL SEMICONDUCTOR CQ89D series types are epoxy molded silicon triacs designed for full wave AC control applications featuring gate triggering in all four (4) quadrants.