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CPH5815

Features: • Composite type with a P-Channel Sillicon MOSFET (MCH3317) and a Schottky Barrier Diode (SBS007M) contained in one package facilitating high-density mounting. • [MOS] 1) Low ON-resistance. 2) Ultrahigh-speed switching. 3) 1.8V drive.• [SBD] 1) Short reverse recovery ti...

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SeekIC No. : 004315725 Detail

CPH5815: Features: • Composite type with a P-Channel Sillicon MOSFET (MCH3317) and a Schottky Barrier Diode (SBS007M) contained in one package facilitating high-density mounting. • [MOS] 1) Low O...

CPH5815 Data Sheet

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Part Number:
CPH5815
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Composite type with a P-Channel Sillicon MOSFET (MCH3317) and a Schottky Barrier Diode (SBS007M) contained in one package facilitating high-density mounting.
• [MOS] 1) Low ON-resistance. 2) Ultrahigh-speed switching. 3) 1.8V drive.
• [SBD] 1) Short reverse recovery time. 2) Low forward voltage.






Pinout






Specifications

Absolute maximum ratings
VDSS [V] 12
ID [A] 1.5
PD [W] 0.8
When mounted on ceramic substrate (600mm²*0.8mm) 1unit
VRRM [V] 15
IO [A] 0.5
Electrical characteristics
VGS(off) min to max [V] 0.3 to 1.0
|yfs| typ [S] 1.8
RDS(on)1 typ [] 0.32
RDS(on)1 max [] 0.45
VGS [V] 2.5
ID [A] 0.4
RDS(on)2 typ [] 0.43
RDS(on)2 max [] 0.65
VGS [V] 1.8
ID [A] 0.1
Ciss [pF] 160
VF max [V] 0.46
IF [A] 0.5
IR [µA] 200
VR [V] 6
trr max [ns] 10
IF=IR [mA] 100
Operation frequency [kHz] 1100


Parameter Symbol Conditions Ratings Unit
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature

VDSS
VGSS
ID
IDP
PD
Tch
Tstg

VRRM
VRSM
IO
IFSM
Tj
Tstg
PW10s, duty cycle1%
Mounted on a ceramic board (600mm2*0.8mm) 1unit






50Hz sine wave, 1 cycle

-12
±10
-1.5
-6.0
0.8
--150
-55 to +125

15
15
0.5
3
-55 to +125
-55 to +125

V
V
A
A
W
°C
°C

V
V
A
A
°C
°C





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