Features: · Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating high-density mounting.· The CPH5501 consists of two chips which are equivalent to the 2SA1338 and the CPH3105, respectively.· Ultrasmall-sized package permitting applied sets to be m...
CPH5501: Features: · Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating high-density mounting.· The CPH5501 consists of two chips which are equivalent to ...
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Absolute maximum ratings | |
---|---|
VCEO [V] | 50 |
IC [A] | 0.5 |
PC [W] | 0.2
When mounted on ceramic substrate (600mm²*0.8mm) |
Electrical characteristics | |
---|---|
hFE min | 100 |
hFE max | 560 |
VCE [V] | 2 |
IC [A] | 0.01 |
fT typ [MHz] | 200 |
VCE [V] | - |
IC [mA] | - |
VCE (sat) typ [V] | 0.15 |
VCE (sat) max [V] | 0.4 |
IC [A] | 0.1 |
IB [mA] | 10 |
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Collector-to-Base Voltage |
VCBO |
-60 |
V | |
Collector-to-Emitter Voltage |
VCEO |
-50 |
V | |
Emitter-to-Base Voltage |
VEBO |
-5 |
V | |
Collector Current |
IC |
-500 |
MA | |
Collector Current (Pulse) |
ICP |
-800 |
MA | |
Collector Dissipation |
PC |
0.3 |
W | |
Junction Temperature |
Tch |
150 |
||
Storage Temperature |
Tstg |
-55 to +150 |
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Collector-to-Base Voltage |
VCBO |
-50 |
V | |
Collector-to-Emitter Voltage |
VCEO |
-50 |
V | |
Emitter-to-Base Voltage |
VEBO |
-6 |
V | |
Collector Current |
IC |
-3 |
A | |
Collector Current (Pulse) |
ICP |
-600 |
MA | |
Collector Dissipation |
PC |
0.9 |
W | |
Junction Temperature |
Tch |
150 |
||
Storage Temperature |
Tstg |
-55 to +150 |