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CPH5805

Features: • Composite type with an N-Channel Sillicon MOSFET (MCH3412) and a Schottky Barrier Diode (SBS006) contained in one package facilitating high-density mounting.[MOSFET]• Low ON-resistance.• Ultrahigh-speed switching.• 4V drive.[SBD]• Short reverse recovery ti...

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SeekIC No. : 004315718 Detail

CPH5805: Features: • Composite type with an N-Channel Sillicon MOSFET (MCH3412) and a Schottky Barrier Diode (SBS006) contained in one package facilitating high-density mounting.[MOSFET]• Low ON-...

CPH5805 Data Sheet

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Part Number:
CPH5805
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Composite type with an N-Channel Sillicon MOSFET (MCH3412) and a Schottky Barrier Diode (SBS006) contained in one package facilitating high-density mounting.
[MOSFET]
• Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
[SBD]
• Short reverse recovery time.
• Low forward voltage.




Pinout






Specifications

Absolute maximum ratings
VDSS [V] 30
ID [A] 3
PD [W] 0.9
When mounted on ceramic substrate (600mm²*0.8mm) 1unit
VRRM [V] 30
IO [A] 0.5
Electrical characteristics
VGS(off) min to max [V] 1.2 to 2.6
|yfs| typ [S] 3
RDS(on)1 typ [] 0.064
RDS(on)1 max [] 0.084
VGS [V] 10
ID [A] 1.5
RDS(on)2 typ [] 0.105
RDS(on)2 max [] 0.15
VGS [V] 4
ID [A] 1
Ciss [pF] 180
VF max [V] 0.47
IF [A] 0.5
IR [µA] 200
VR [V] 10
trr max [ns] 10
IF=IR [mA] 100
Operation frequency [kHz] 200


or-to-Base Voltage
VCBO
-30
V
Collector-to-Emitter Voltage
VCEO
-30
V
Emitter-to-Base Voltage
VEBO
-5
V
Collector Current
IC
-3
A
Collector Current (Pulse)
ICP
-5
A
Base Current
IB
-600
mA
Collector Dissipation
PC
Mounted on a ceramic board (600m*0.8mm)
0.9
W
Junction Temperature
Tch
150
Storage Temperature
Tstg
-55 to +150
[SBD]
Repetitive Peak Reverse Voltage
VRRM
15
V
Non-repetitive Peak Reverse Surge Voltage
VRSM
15
V
Average Output Current
IO
1
A
Surge Current
IFSM
50Hz sine wave, 1 cycle
10
A
Junction Temperature
Tch
-55 to +125
Storage Temperature
Tstg
-55 to +150

TR1

Parameter
Symbol
Conditions
Ratings
Unit
[TR1(NPN Tr)]
Collector-to-Base Voltage
VCBO
30
V
Collector-to-Emitter Voltage
VCEO
20
V
Emitter





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