Position: Home  > All Categories> Integrated Circuits (ICs) > CPH5801

CPH5801

Features: · The CPH5801 composite device consists of following two devices to facilitate high-density mounting. One is an N-channel MOSFET that features low ON resistance, high-speed switching, and low driving voltage. The other is a shottky barrier diode that features short reverse recovery time ...

product image

CPH5801 Picture
See larger image
SeekIC No. : 004315714 Detail

CPH5801: Features: · The CPH5801 composite device consists of following two devices to facilitate high-density mounting. One is an N-channel MOSFET that features low ON resistance, high-speed switching, and ...

CPH5801 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
CPH5801
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/5/8

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· The CPH5801 composite device consists of following two devices to facilitate high-density mounting. One is an N-channel MOSFET that features low ON resistance, high-speed switching, and low driving voltage. The other is a shottky barrier diode that features short reverse recovery time and low forward oltage.
· Each device incorporated in the CPH5801 is equivalent to the 2SK3119 and to the SBS005, respectively.


Specifications

Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain-to-Source Voltage
VDSS
20
V
Gate-to-Source Voltage
VGSS
±10
V
Drain Current (DC)
ID
4
A
Drain Current (Pulse)
IDP
PW 10ms, duty cycle 1%
5.6
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900m50.8mm)
0.9
W
Channel Temperature
Tch
150
Storage Temperature
Tstg
-55 to +125
m
[SBD]
Repetitive Peak Reverse Voltage
VRRM
30
V
Nonrepetitive Peak Reverse Surge Voltage
VRSM
30
V
Average Output Current
IO
1
A
Surge Forward Current
IFSM
50Hz sine wave, 1 cycle
10
A
Junction Temperature
Tj
-55 to +125
Storage Temperature
Tstg
-55 to +150



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Optical Inspection Equipment
AA924
A21K4B
Circuit Protection
A50QS75-4Y
F-17*77
Tapes, Adhesives
803
AC452-2
Filters
PICO2205A
PICO2204A
Line Protection, Backups
BX0023
A20B-1008-0550
Tools
TCP202
G084SN05 V.3
View more