Features: · Composite type with an NPN transistor and a Schottky barrier diode contained in one package facilitating high-density mounting.· Each device incorporated in the CPH5704 is equivalent to the CPH3206 and to the SBS004, respectively.· Ultrasmall package facilitates miniaturization in end ...
CPH5704: Features: · Composite type with an NPN transistor and a Schottky barrier diode contained in one package facilitating high-density mounting.· Each device incorporated in the CPH5704 is equivalent to ...
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Parameter |
Symbol |
Conditions |
Ratings |
Unit |
[TR] | ||||
Collector-to-Base Voltage |
VCBO |
15 |
V | |
Collector-to-Emitter Voltage |
VCEO |
5 |
V | |
Emitter-to-Base Voltage |
VEBO |
5 |
V | |
Collector Current |
IC |
3 |
A | |
Collector Current (Pulse) |
ICP |
5 |
A | |
Base Current |
IB |
600 |
mA | |
Collector Dissipation |
PC |
Mounted on a ceramic board (600m*0.8mm) |
0.9 |
W |
Junction Temperature |
Tch |
150 |
||
Storage Temperature |
Tstg |
-55 to +125 |
Repetitive Peak Reverse Voltage |
VRRM |
15 |
V | |
Non-repetitive Peak Reverse Surge Voltage |
VRSM |
15 |
V | |
Average Output Current |
IO |
1 |
mA | |
Surge Current |
IFSM |
50Hz sine wave, 1 cycle |
10 |
A |
Junction Temperature |
Tch |
-55 to +125 |
||
Storage Temperature |
Tstg |
-55 to +125 |
Absolute maximum ratings | |
---|---|
VCEO [V] | 15 |
IC [A] | 3 |
PC [W] | 0.9
When mounted on ceramic substrate (600mm²*0.8mm) |
VRRM [V] | 15 |
IO [A] | 1 |
Electrical characteristics | |
---|---|
hFE min | 200 |
hFE max | 560 |
VCE [V] | 2 |
IC [A] | 0.5 |
VCE (sat) typ [V] | 0.1 |
VCE (sat) max [V] | 0.15 |
IC [A] | 1.5 |
IB [mA] | 30 |
VF max [V] | 0.4 |
IF [A] | 1 |
IR max [mA] | 0.5 |
VR [V] | 6 |
trr max [nS] | 15 |
IF [A] | 0.1 |