Features: ` 2k bytes or 4k bytes Flash Program Memory, with Security Feature, organized in 512 byte pages that can be erased or written individually` 128 bytes volatile RAM` 2.25V 2.75V In-System Programmability of Flash` High endurance - 20k Erase/Write Cycles` Superior Data Retention - 100 year...
COP8TAC9: Features: ` 2k bytes or 4k bytes Flash Program Memory, with Security Feature, organized in 512 byte pages that can be erased or written individually` 128 bytes volatile RAM` 2.25V 2.75V In-System P...
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Temperature Min | -40 deg C |
Temperature Max | 85 deg C |
Code Memory | 4000 Bytes |
Code Type | Flash |
RAM Size Bytes | 128 Bytes |
I/O | 40 |
Halt/Idle | Yes |
Wakeup | Yes |
TO Timer | Yes |
Supply Min | 2.25 Volt |
Supply Max | 2.75 Volt |
Interrupts | 8 |
Power on Reset | Yes |
Watchdog/Clock Monitor | Yes |
Interface Type | Microwire |
CAN | No |
With TempSensor | No |
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The COP8TAB9/TAC9 Flash microcontrollers are highly integrated COP8™ Feature core devices, with 2k or 4k Flash memory and advanced features. These single-chip CMOS devices are suited for applications requiring a full featured, in-system reprogrammable controller with moderate memory and low EMI. The same device is used for development, pre-production and volume production with a range of COP8 software and hardware development tools.
A Masked ROM device (COP8TAB5/TAC5) has been developed and provides identical features except for the Boot ROM and Flash Memory and related features such as In- System Programming and reprogrammability. The ROM device is supported, in emulation, by this device.
The lack of the Boot ROM and Flash Memory in the ROM device, prompts us to caution the user, utilizing the COP8TAx9 Flash based devices during development for applications to be produced using the COP8TAx5 ROM devices, to ensure that code contains NO calls to Boot ROM functions prior to submission for ROM generation. Instances of the JSRB instruction in ROM based devices will be executed as a JSR instruction to a location in the first 256 bytes of Program Memory.