CMKT5089M10

Specifications

	SYMBOL		UNITS
Collector-Base Voltage	VCBO	30	V
Collector-Emitter Voltage	VCEO	25	V
Emitter-Base Voltage	VEBO	4.5	V
Collector Current	IC	50	mA
Power Dissipation	PD	350	mW
Operating and Storage
Junction Temperature	TJ,Tstg	-65 to +150	°C
Thermal Resistance	JA	357	°C/W

Description

The CENTRAL SEMICONDUCTOR CMKT5089M10 consists of two (2) individual, isolated 5089 NPN silicon transistors with matched hFE. This ULTRAminiTM device is manufactured by the epitaxial planar process and epoxy molded in an SOT-363 surface mount package. The CMKT5089M10 has been designed for applications requiring high gain and low noise.