CM300DY-12

Features:

· Low Drive Power
· Low VCE(sat)
· Discrete Super-Fast Recovery Free-Wheel Diode
· High Frequency Operation
·Isolated Baseplate for Easy Heat Sinking


Application

· AC Motor Control
· Motion/Servo Control
· UPS
· Welding Power Supplies


Specifications

Ratings	Symbol	CM900HB-90H	Units
Junction Temperature	Tj	-40 to 150	°C
Storage Temperature	Tstg	-40 to 125	°C
Collector-Emitter Voltage (G-E SHORT)	VCES	600	Volts
Gate-Emitter Voltage(G-E SHORT)	VGES	±20	Volts
Collector Current (Tc = 25°C)	IC	300	Amperes
Peak Collector Current	ICM	600*	Amperes
Emitter Current** (TC = 25°C)	IE	300	Amperes
Peak Emitter Current**	IEM	600*	Amperes
Maximum Collector Dissipation (Tc = 25°CTj <125°C)	Pc	1100	Watts
Mounting Torque, M5 Main Terminal	-	1.47 ~ 1.96	N ` m
Mounting Torque, M6 Mounting	-	1.96 ~ 2.94	N ` m
Weight	-	270	Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)	Viso	2500	Vrms

Description

Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. All CM300DY-12 components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.