CLC5509

Features:

`0.58nV Hz total input noise @ 12MHz
`< .5ns group delay repeatability
`High cutoff −3dB @ 33MHz
`Low cutoff −3dB @ 0.5MHz
`2.0dB noise figure @ 50W
`−60dBc intermod for 2VPP @ 5MHz
`Supply current: 11mA
`Available in 8-pin SOIC


Application

·Ultrasound preamp
·Tape drive preamp
·Disk drive preamp


Pinout




Specifications

Supply Voltage                                                          ±5.5V
Output Current                                                          70mA
Common-Mode Input Voltage                                    ±V_CC
Maximum Junction Temperature                               +150
Storage Temperature Range                      −65 to +150
Lead Temperature (soldering 10 sec)                      +300
ESD Rating (human body model)                              4000V


Description

The CLC5509 is a high performance, ultra-low noise preamplifierdesigned for applications requiring unconditional stability for wide ranges of complex input loads. Both input impedance and gain are externally adjustable, which make it simple to interface to peizoelectric ultrasound transducers.

The CLC5509 preamplifier's low 0.58nV Hz total input noise makes it ideal for noise sensitive front ends. The high repeatability in group delay over voltage and temperature translates into precision edge measurements for Doppler applications.

The IC consists of an emitter input, common base amplifier stage followed by a low distortion, closed loop buffer. External negative feedback creates a well controlled input impedance to allow a near noiseless active input transmission line termination. The preamp is stable against changes in source impedance of 50 to 200W over temperature and supply variations, with gains from 14dB to 26dB. The CLC5509 preamp architecture is also well suited for use with magneto-resistive tape or disk drive heads. In these applications the head bias current can be reused to bias the preamp. The part is packaged in an 8-pin plastic SOIC, and runs off ±5V supplies. External biasing is required for the input signal path.

The CLC5509 is constructed using an advanced complementary bipolar process and National Semiconductor's proven high performance architectures.