CHA2395

Features:

·Broadband performances
·3.0dB Noise Figure
·30dB gain
·±1.0dB gain flatness
·Low DC power consumption, 90mA@3.5V
·Chip size : 2.07 X 1.11 X 0.10 mm


Specifications

Symbol	Parameter	Values	Unit
Vd	Drain bias voltage	4.5	V
Vg	Gate bias voltage	-2.0 to +0.4	V
Vdg	Maximum drain to gate voltage (Vd - Vg)	+5.0	V
Id	Drain bias current	200	mA
Pin	Maximum peak input power overdrive (2)	+15	dBm
Ta	Operating temperature range	-40 to +85
Tstg	Storage temperature range	-55 to +125

Description

The CHA2395 is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems.

CHA2395 is manufactured with a HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA2395 is available in chip form.