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CHA2063a

Features: ·Broad band performance 7-13GHz·2.0dB noise figure, 8-13GHz·19dB gain·Low DC power consumption, 40mA·18dBm 3rd order intercept point·Chip size : 1,52 x 1,27 x 0.1mmPinoutSpecifications Symbol Parameter Values Unit Vd Drain bias voltage (3) 5.0 V Pin Maximum peak input p...

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SeekIC No. : 004313360 Detail

CHA2063a: Features: ·Broad band performance 7-13GHz·2.0dB noise figure, 8-13GHz·19dB gain·Low DC power consumption, 40mA·18dBm 3rd order intercept point·Chip size : 1,52 x 1,27 x 0.1mmPinoutSpecifications ...

CHA2063a Data Sheet

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Part Number:
CHA2063a
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Broad band performance 7-13GHz
·2.0dB noise figure, 8-13GHz
·19dB gain
·Low DC power consumption, 40mA
·18dBm 3rd order intercept point
·Chip size : 1,52 x 1,27 x 0.1mm


Pinout

Connection Diagram


Specifications

Symbol Parameter Values Unit
Vd Drain bias voltage (3) 5.0 V
Pin Maximum peak input power overdrive (2) +15 dBm
Top Operating temperature range -40 to +85
Tstg Storage temperature range -55 to +125



Description

The CHA2063a is a two-stage wide band monolithic low noise amplifier.

CHA2063a is manufactured with a PM-HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA2063a is supplied in chip form or in an hermetic leadless ceramic package.


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