CHA2394

Features:

·Broadband performances : 36-40GHz
·2.5dB Noise Figure
·21dB gain
·±1.5dB gain flatness
·Low DC power consumption, 60mA @ 3.5V
·Chip size : 1.72 X 1.08 X 0.10 mm


Specifications

Symbol	Parameter	Values	Unit
Vd	Drain bias voltage	5.0	V
Id	Drain bias current	150	mA
Vdg	Maximum drain to gate voltage (Vd - Vg)	+5.0	V
Vg	Gate bias voltage	-2.0 to +0.4	V
Pin	Maximum peak input power overdrive (2)	+15	dBm
Pin	Maximum continuous input power	-5	dBm
Ta	Operating temperature range	-40 to +85
Tstg	Storage temperature range	-55 to +125

Description

The CHA2394 is a three-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems.

CHA2394 is manufactured with a HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA2394 is available in chip form.