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CHA2391

Features: ·Broad band performance 36-40GHz·2.5dB noise figure, 36-40GHz·15dB gain, ± 0.5dB gain flatness·Low DC power consumption, 50mA·20dBm 3rd order intercept point·Chip size : 1,67 x 1,03 x 0.1mmSpecifications Symbol Parameter Values Unit Vd Drain bias voltage 5.0 V Vg Gate b...

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SeekIC No. : 004313387 Detail

CHA2391: Features: ·Broad band performance 36-40GHz·2.5dB noise figure, 36-40GHz·15dB gain, ± 0.5dB gain flatness·Low DC power consumption, 50mA·20dBm 3rd order intercept point·Chip size : 1,67 x 1,03 x 0.1m...

CHA2391 Data Sheet

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Part Number:
CHA2391
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Broad band performance 36-40GHz
·2.5dB noise figure, 36-40GHz
·15dB gain, ± 0.5dB gain flatness
·Low DC power consumption, 50mA
·20dBm 3rd order intercept point
·Chip size : 1,67 x 1,03 x 0.1mm


Specifications

Symbol Parameter Values Unit
Vd Drain bias voltage 5.0 V
Vg Gate bias voltage -2.0 to +0.4 V
Vdg Maximum drain to gate voltage (Vd-Vg) +5.0 V
Pin Maximum peak input power overdrive (2) +15 dBm
Pin Maximum continuous input power +1 dBm
Top Operating temperature range -40 to +85
Tsg Storage temperature range -55 to +125



Description

The CHA2391 is a two-stage wide band monolithic low noise amplifier.

CHA2391 is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA2391 is supplied in chip form.


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