CHA2296

Features:

·Broadband performance : 9-19GHz
·14dBm saturated output power.
·16dB ±1.5dB gain
·Very good broadband matching
·Low DC power consumption, 190mA @ 3.5V
·Chip size : 2.26 X 1.33 X 0.10 mm


Specifications

Symbol	Parameter	Values	Unit
Vds	Drain bias voltage_small signal	4.0	V
Ids	Drain bias current_small signal	300	mA
Vgs	Gate bias voltage	-2 to +0.4	V
Vdg	Negative Drain Gate voltage (= Vds Vgs)	+5	V
Pin	Maximum peak input power overdrive (2)	+15	dBm
Ta	Operating temperature range	-40 to +85
Tstg	Storage temperature range	-55 to +155

Description

The CHA2296 is a broadband buffer splitter three-stage monolithic amplifier.

CHA2296 is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process.

CHA2296 is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA2296 is available in chip form.