CHA2295

Features:

·Broadband performance : 6 -11GHz
·14dBm saturated output power.
·18dB ±1.5dB gain flatness
·Good broadband matching
·Low DC power consumption, 160mA @ 3.5V
·Chip size : 2.26 X 1.33 X 0.10 mm


Specifications

Symbol	Parameter	Values	Unit
Vds	Maximum Drain bias voltage	4.0	V
Ids	Maximum drain bias current	250	mA
Vgs	Gate bias voltage	-2.5 to +0.4	V
Vdg	Maximum drain to gate voltage (Vd - Vg))	+5	V
Pin	Maximum input power overdrive (2)	+15	dBm
Tch	Maximum channel temperature	+175
Ta	Operating temperature range	-40 to +85
Tstg	Storage temperature range	-55 to +125

Description

The CHA2295 is a broadband buffer splitter three-stage monolithic amplifier.

CHA2295 is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process.

CHA2295 is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA2295 is available in chip form.