Features: • Frequency range : 35-40GHz• 4.0dB Noise Figure.• 22dB gain• Gain control range: 15dB• Low DC power consumption, 120mA @ 5V• Chip size : 2.32 X 1.235 X 0.10 mmSpecifications Symbol Parameter Values Unit Vd Maximum Drain bias voltage +5.25...
CHA2294: Features: • Frequency range : 35-40GHz• 4.0dB Noise Figure.• 22dB gain• Gain control range: 15dB• Low DC power consumption, 120mA @ 5V• Chip size : 2.32 X 1.235 X...
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Features: Broad band performance: 10-16GHzGain = 15dB (typical)Noise Figure 2.0dB (typical) Output...
Symbol | Parameter | Values | Unit |
Vd | Maximum Drain bias voltage | +5.25 | V |
Id | Maximum drain bias current | 200 | mA |
Vg | Gate bias voltage | -2.5 to +0.4 | V |
Vc | Maximum Control bias voltage | +1.5 | V |
Vdg | Maximum drain to gate voltage (Vd - Vg) | +5.0 | V |
Pin | Maximum input power overdrive (2) | +15 | dBm |
Tch | Maximum channel temperature | +175 | |
Ta | Operating temperature range | -40 to +85 | |
Tstg | Storage temperature range | -55 to +125 |
The CHA2294 is a high gain four-stage monolithic low noise amplifier with variable gain. It is designed for a wide range of applications, from military to commercial communication systems.The backside of the chip is both RF and DC grounded. This helps simplify the assembly process.
CHA2294 is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
CHA2294 is available in chip form.