CHA2293

Features:

• Frequency range : 24.5-29.5GHz
• 3dB Noise Figure.
• 24dB gain
• Gain control range: 15dB
• Low DC power consumption, 160mA @ 5V
• Chip size : 2.32 X 1.23 X 0.10 mm


Specifications

Symbol	Parameter	Values	Unit
Vd	Drain bias voltage	5.5	V
Vc	Control bias voltage	1.5	V
Id	Drain bias current	250	mA
Vg	Gate bias voltage	-2.0 to +0.4	V
Pin	Maximum peak input power overdrive (2)	+15	dBm
Ta	Operating temperature range	-40 to +85
Tstg	Storage temperature range	-55 to +155

Description

The CHA2293 is a high gain four-stage monolithic low noise amplifier with variable gain. It is designed for a wide range of applications, from military to commercial communication systems.The backside of the chip is both RF and DC grounded. This helps simplify the assembly process.

CHA2293 is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA2293 is available in chip form.