CHA2291

Features:

• Frequency range : 10-18GHz
• 2.2dB Noise Figure.
• 23dB gain
• Gain control range: 20dB
• DC power consumption: 180mA @ 5V
• Chip size : 2.49 X 1.23 X 0.10 mm


Specifications

Symbol	Parameter	Values	Unit
Vd	Maximum Drain bias voltage	+5.25	V
Id	Maximum drain bias current	250	mA
Vg	Gate bias voltage	-2.5 to +0.4	V
Vc	Maximum Control bias voltage	+1.5	V
Vdg	Maximum drain to gate voltage (Vd - Vg)	+5.0	V
Pin	Maximum input power overdrive (2)	+15	dBm
Tch	Maximum channel temperature	+175
Ta	Operating temperature range	-40 to +85
Tstg	Storage temperature range	-55 to +125

Description

The CHA2291 is a high gain four-stage monolithic low noise amplifier with variable gain. It is designed for a wide range of applications, from military to commercial communication systems.The backside of the chip is both RF and DC grounded. This helps simplify the assembly process.

CHA2291 is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA2291 is available in chip form.