CHA2266

Features:

• Broad band performance 12.517GHz
• 2.5dB noise figure
• 34dB gain, +/- 0.5dB gain flatness
• Low DC power consumption:130mA
• Saturated output power : 16dBm
• Chip size 2.32 x 1.02 x 0.1mm


Specifications

Symbol	Parameter (1)	Values	Unit
Vd	Drain bias voltage	4.3	V
Pin	Maximum continious input power overdrive	-15	dBm
Top	Operating temperature range	-40 to +85
Tstg	Storage temperature	-55 to +125

Description

The CHA2266 is a self biased, low-noise high gain driver amplifier. It is designed mainly for VSAT applications in Ku-band. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process.

CHA2266 is manufactured on a standard GaAs PHEMT process, with via holes through the substrate, air bridges and electron beam gate lithography.