CHA2194

Features:

·Broad band performance 36-44GHz
·3dB noise figure
·19dB gain, ± 0.5dB gain flatness
·Low DC power consumption, 45mA
·20dBm 3rd order intercept point
·Chip size : 1.670 x 0.970x 0.1mm


Specifications

Symbol	Parameter	Values	Unit
Vd Vg Id	Drain bias voltage (5) Vg12 and Vg3 max Drain current	4 +1 75	V V mA
Pin	Maximum peak input power overdrive (4)	15	dBm
Top	Operating temperature range	-40 to +85
Tstg	Storage temperature range	-55 to +125

Description

CHA2194 is a three-stage self biased wide band monolithic low noise amplifier, designed for 36GHz to 44GHz point to point and point to multipoint communication .

CHA2194 is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA2194 is supplied in chip form.