CHA2098RBF

Features:

·Broadband performance: 20-40GHz
·Small signal gain 18dB (typical)
·SMD leadless package
·Pout-1dB : +15dBm (typical).
·Dimensions: 5.08 x 5.08 x 0.97 mm³


Specifications

Symbol	Parameter	Values	Unit
Vd	Drain bias voltage	4.0	V
Id	Drain bias current	200	mA
Vg	Gate bias voltage	-2.0 to +0.4	V
Ta	Operating temperature range (2)	-40 to +85
Tstg	Storage temperature range	-55 to +155

Description

The monolithic microwave IC (MMIC) in the package is a high gain broadband threestage monolithic buffer amplifier. CHA2098RBF is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA2098RBF is supplied in a new SMD leadless chip carrier.