Features: ·Dual Low Noise Amplifier (LNA) Monolithic Microwave Integrated Circuit (MMIC)·Typical noise figure of 0.55 dB·Typical gain of 16.3 dB at 1810 MHz·Input IP3 of 13.5 dBm at 1810 MHz·Low current of 58 mA at 2.5 V for each channel·Low cost SSOP16 plastic package.ApplicationDCS1800PCS1900Pin...
CGY2105ATS: Features: ·Dual Low Noise Amplifier (LNA) Monolithic Microwave Integrated Circuit (MMIC)·Typical noise figure of 0.55 dB·Typical gain of 16.3 dB at 1810 MHz·Input IP3 of 13.5 dBm at 1810 MHz·Low cur...
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Features: Power Amplifier (PA) overall efficiency 55%27.5 dBm saturated output power at 3.2 V0 dBm...
SYMBOL | PARAMETER | CONDITIONS | MIN. | TYP. | MAX. | UNIT |
VDS | drain-source voltage | - | - | UNIT | V | |
VGS | gate-source voltage | -3 | - | +1 | V | |
VDG | drain-gate voltage | - | - | 7 | V | |
Vsupply | positive supply voltage | see Chapter "Application and test information" |
- | - | 6 | V |
Vneg | negative supply voltage | see Chapter "Application and test information" |
-6 | - | - | V |
Tamb | ambient temperature | -40 | - | +85 | ||
Tj | junction temperature | - | - | 150 | ||
Tstg | storage temperature | - | - | 150 | ||
Ptot | total power dissipation | Tamb < 85 | - | - | 430 | mW |