CGY2013G

Features:

`Power Amplifier (PA) overall efficiency 52%
`35.5 dB gain
`0 dBm input power
`Gain control range >55 dB
`Low output noise floor of PA < -130 dBm/Hz in GSM RX band
`Wide operating temperature range -20 to +85
`LQFP 48 pin package
`Compatible with power ramping controller PCF5077
`Compatible with GSM RF transceiver SA1620.


Application

·880 to 915 MHz hand-held transceivers for E-GSM applications
·900 MHz Time Division Multiple Access (TDMA) systems.

Pinout




Specifications

SYMBOL	PARAMETER	MIN.	MAX.	UNIT
VDD	positive supply voltage	-	7	V
VGG	negative supply voltage	-	-10	V
Tj(max)	maximum operating junction temperature	-	150
Tstg	IC storage temperature	-	150
Ptot	total power dissipation	-	1.5	W

Description

The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply.

The PA requires only a 30 dB harmonic low-pass filter to comply with the GSM transmit spurious specification. CGY2013G can be switched off and its power controlled by monitoring the actual drain voltage applied to the amplifier stages.