Features: High Gain+34 dBm Power OutputProprietary Power FET Process>45% Linear Power Added Efficiency+29 dBm with 30 dBc Third Order Products Surface Mount SO-8 Power PackageApplicationISM Band Base Stations and TerminalsPCS/PCN Base Stations and TerminalsWireless Local LoopSpecifications ...
CFK2162-P5: Features: High Gain+34 dBm Power OutputProprietary Power FET Process>45% Linear Power Added Efficiency+29 dBm with 30 dBc Third Order Products Surface Mount SO-8 Power PackageApplicationISM Band ...
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Features: High Gain +34 dBm Power Output Proprietary Power FET Process >45% Linear Power Added ...
Parameter | Symbol | Values |
Drain-source voltage | Vds | 12V (3) |
Gate-source voltage | Vgs | -5V |
Drain current | Ids | Idss |
Continuous Dissipation1 | Pt | 10W |
Channel temperature | Tch | 175°C |
Storage temperature range | Tstg | -65°C to +175°C |
The CFK2162-P5 is a high-gain FET intended for driver amplifier applications in high-power systems, and output stage usage in medium power applications at power levels up to +34 dBm. CFK2162-P5 is easily matched and provides excellent linearity at 2 Watts. Manufactured in Celeritek's proprietary power FET process, CFK2162-P5 is assembled in an industry standard surface mount SO-8 power package that is compatible with high volume, automated board assembly techniques.