Features: High Gain +34 dBm Power Output Proprietary Power FET Process >45% Linear Power Added Efficiency +29 dBm with 30 dBc Third Order Products Surface Mount SO-8 Power Package Application PCS/PCN Base Stations and TerminalsWireless Local LooPinout Specifications Parameter Symbol Rat...
CFK2162-P3: Features: High Gain +34 dBm Power Output Proprietary Power FET Process >45% Linear Power Added Efficiency +29 dBm with 30 dBc Third Order Products Surface Mount SO-8 Power Package Application PCS...
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Features: High Gain+34 dBm Power OutputProprietary Power FET Process>45% Linear Power Added Eff...
High Gain
+34 dBm Power Output
Proprietary Power FET Process
>45% Linear Power Added Efficiency
+29 dBm with 30 dBc Third Order Products
Surface Mount SO-8 Power Package
Parameter |
Symbol | Rating |
Drain-Source Voltage | VDS | 12V (3) |
Gate-Source Voltage | VGS | -5V |
Drain Current |
IDS | Idss |
Continuous Dissipation | PT | 10W |
Channel Temperature | TCH | 175°C |
Storage Temperature | TSTG | -65°C to +175°C |
The CFK2162-P3 is a high-gain FET intended for driver amplifier applications in high-power systems, and output stage usage in medium power applications at power levels up to +34 dBm. CFK2162-P3 is easily matched and provides excellent linearity at 2 Watts. Manufactured in Celeritek's proprietary