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CEB51A3

Features: ·30V, 48A, R DS(ON) =16.5mW @VGS = 10V.R DS(ON) =28mW @VGS = 4.5V.·Super high dense cell design for extremely low RDS(ON).·High power and current handing capability.·TO-220 & TO-263 package.Specifications Parameter Symbol Limit Units Drain-Source Voltage VDS 30...

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SeekIC No. : 004312690 Detail

CEB51A3: Features: ·30V, 48A, R DS(ON) =16.5mW @VGS = 10V.R DS(ON) =28mW @VGS = 4.5V.·Super high dense cell design for extremely low RDS(ON).·High power and current handing capability.·TO-220 & TO-263 pa...

CEB51A3 Data Sheet

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Part Number:
CEB51A3
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·30V, 48A, R DS(ON) =16.5mW @VGS = 10V.
R DS(ON) =28mW @VGS = 4.5V.
·Super high dense cell design for extremely low RDS(ON).
·High power and current handing capability.
·TO-220 & TO-263 package.




Specifications

Parameter
Symbol
Limit
Units
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Drain Current-Continuous
ID
48
A
Drain Current-Pulsed a
IDM
160
A
Maximum Power Dissipation @ TC = 25
- Derate above 25
PD
70
W
0.48
W/
Operating and Store Temperature Range
TJ,Tstg
-55 to 175





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