Features: 60V, 50A ,RDS(ON) = 17mW (typ) @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.TO-220 & TO-263 package.Lead free product is acquired.Specifications Parameter Symbol Limit Units Drain-Source Voltage VDS 60 V ...
CEB50N06: Features: 60V, 50A ,RDS(ON) = 17mW (typ) @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.TO-220 & TO-263 package.Lead free product is ...
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Parameter | Symbol | Limit | Units |
Drain-Source Voltage | VDS | 60 | V |
Gate-Source Voltage | VGS | ±20 | V |
Drain Current-Continuous | ID | 50 | A |
Drain Current-Pulsed a | IDM | 150 | A |
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C |
PD | 131 | W |
0.88 | W/ C | ||
Single Pulsed Avalanche Energy d | EAS | 225 | mJ |
Single Pulsed Avalanche Current d | IAS | 50 | A |
Operating and Store Temperature Range | TJ,Tstg | 55 to 175 | .C |