CBCP69

Configuration :
Collector- Emitter Voltage VCEO Max : 20 V
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : 5 V
Package / Case : SOT-223
Packaging : Box
Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 60
Maximum Operating Frequency : 65 MHz


Specifications

	SYMBOL		UNITS
Collector-Emitter Voltage	VCES	25	V
Collector-Emitter Voltage	VCEO	20	V
Emitter-Base Voltage	VEBO	5.0	V
Collector Current	IC	1.0	A
Collector Current-Peak	ICM	2.0	A
Base Current	IB	100	mA
Base Current Peak	IBM	200	mA
Power Dissipation	PD	2.0	W
Operating and Storage
Junction Temperature	TJ,Tstg	-65 to +150
Thermal Temperature	QJA	62.5	/W

Description

The CENTRAL SEMICONDUCTOR CBCP68, CBCP69 types are complementary silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability.