Specifications SYMBOL UNITS Collector-Emitter Voltage VCES 25 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5.0 V Collector Current IC 1.0 A Collector Current-Peak ICM 2.0 A Base Current IB 100 mA Base Current Peak IBM 200 mA ...
CBCP68: Specifications SYMBOL UNITS Collector-Emitter Voltage VCES 25 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5.0 V Collector Current IC 1.0 A Co...
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SYMBOL | UNITS | ||
Collector-Emitter Voltage | VCES | 25 | V |
Collector-Emitter Voltage | VCEO | 20 | V |
Emitter-Base Voltage | VEBO | 5.0 | V |
Collector Current | IC | 1.0 | A |
Collector Current-Peak | ICM | 2.0 | A |
Base Current | IB | 100 | mA |
Base Current Peak | IBM | 200 | mA |
Power Dissipation | PD | 2.0 | W |
Operating and Storage | |||
Junction Temperature | TJ,Tstg | -65 to +150 | |
Thermal Temperature | QJA | 62.5 | /W |
The CENTRAL SEMICONDUCTOR CBCP68, CBCP69 types are complementary silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability.