BYQ30EB-200

Pinout




Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VRRM	Peak repetitive reverse Voltage			200	V
VRWM	Working peak reverse voltage			200	V
VR	continuous reverse voltage			200	V
I O(AV)	Output current (both diodes conducting)1	square wave; = 0.5; Tmb 104		16	A
I O(RMS)	RMS forward current			23	A
I FRM	Repetitive peak forward current per diode	t = 25 s;  = 0.5; Tmb 104		16	A
IFSM	non-repetitive peak forward current	t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRMmax)		100 110	A
I2t	I2t for fusing	t = 10 ms		50	A2S

I RRM	Peak repetitive reverse surge current	tp = 2 s; = 0.001		0.2	A
IRSM	Non-repetitive peak reverse current per diode	tp = 100 s		0.2	A
Tstg	storage temperature		-40	+150
Tj	operating junction temperature			+150

Description

Glass passivated high efficiency rugged dual rectifier BYQ30EB-200 diodes in a plastic envelope suitable for surface  mounting, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. BYQ30EB-200 can withstand reverse voltage transients and have guaranteed reverse surge and ESD capability. BYQ30EB-200 are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential.