BYQ30EB-200

PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM Peak repetitive reverseVoltage 200 V VRWM Working peak reversevoltage 200 V VR continuous reverse voltage 200 V I O(AV) Output current (both diodesconducting)1 square wave; = 0.5; ...

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SeekIC No. : 004305696 Detail

BYQ30EB-200: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM Peak repetitive reverseVoltage 200 V VRWM Working peak reversevoltage 200 V VR continuous rev...

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Part Number:
BYQ30EB-200
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Pinout

  Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM Peak repetitive reverse
Voltage
200 V
VRWM Working peak reverse
voltage
200   V
VR continuous reverse voltage 200   V
I O(AV) Output current (both diodes
conducting)1
square wave; = 0.5; Tmb 104

16

A
I O(RMS) RMS forward current

23

A
I FRM Repetitive peak forward current per diode t = 25 s;  = 0.5; Tmb 104 16 A
IFSM non-repetitive peak forward current t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied VRRMmax)
100
110


A
I2t I2t for fusing t = 10 ms 50 A2S
I RRM Peak repetitive reverse
surge current
tp = 2 s; = 0.001 0.2 A
IRSM Non-repetitive peak reverse
current per diode
tp = 100 s 0.2 A
Tstg storage temperature -40 +150
Tj operating junction temperature +150



Description

Glass passivated high efficiency rugged dual rectifier BYQ30EB-200 diodes in a plastic envelope suitable for surface  mounting, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. BYQ30EB-200 can withstand reverse voltage transients and have guaranteed reverse surge and ESD capability. BYQ30EB-200 are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential.


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