PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM Peak repetitive reverseVoltage 200 V VRWM Working peak reversevoltage 200 V VR continuous reverse voltage 200 V I O(AV) Output current (both diodesconducting)1 square wave; = 0.5; ...
BYQ30EB-200: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM Peak repetitive reverseVoltage 200 V VRWM Working peak reversevoltage 200 V VR continuous rev...
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Features: * Low forward volt drop* Fast switching* Soft recovery characteristic* Reverse surge cap...
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VRRM | Peak repetitive reverse Voltage |
200 | V | ||
VRWM | Working peak reverse voltage |
200 | V | ||
VR | continuous reverse voltage | 200 | V | ||
I O(AV) | Output current (both diodes conducting)1 |
square wave; = 0.5; Tmb 104 |
16 |
A | |
I O(RMS) | RMS forward current |
23 |
A | ||
I FRM | Repetitive peak forward current per diode | t = 25 s; = 0.5; Tmb 104 | 16 | A | |
IFSM | non-repetitive peak forward current | t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRMmax) |
100 110 |
A | |
I2t | I2t for fusing | t = 10 ms | 50 | A2S |
I RRM | Peak repetitive reverse surge current |
tp = 2 s; = 0.001 | 0.2 | A | |
IRSM | Non-repetitive peak reverse current per diode |
tp = 100 s | 0.2 | A | |
Tstg | storage temperature | -40 | +150 | ||
Tj | operating junction temperature | +150 |