Features: * Fast recovery epitaxial diode* Soft recovery characteristicsSpecifications Parameter Symbol Values Unit Mean forward current TC = 90 °C, D = 0.5 IFAV 12 A RMS forward current IFRMS 20 A Surge forward current, sine halfwave, aperiodic IFSM 50 A Tj = 100 °C, ...
BYP 301: Features: * Fast recovery epitaxial diode* Soft recovery characteristicsSpecifications Parameter Symbol Values Unit Mean forward current TC = 90 °C, D = 0.5 IFAV 12 A RMS forward cu...
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Parameter | Symbol | Values | Unit |
Mean forward current TC = 90 °C, D = 0.5 | IFAV | 12 | A |
RMS forward current | IFRMS | 20 | A |
Surge forward current, sine halfwave, aperiodic | IFSM | 50 | A |
Tj = 100 °C, f = 50 Hz | |||
Repetitive peak forward current | IFRM | 110 | A |
Tj = 100 °C, tp 10 µs | |||
i 2t value Tj = 100 °C, tp = 10 ms | i2dt | 13 | A2s |
Repetitive peak reverse voltage | VRRM | 1200 | V |
Surge peak reverse voltage | VRSM | 1200 | V |
Power dissipation TC = 90 °C | Ptot | 40 | W |
Chip or operating temperature | Tj | -40 ... + 150 | °C |
Storage temperature | Tstg | -40 ... + 150 | °C |