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BYP 102

Features: * Fast recovery epitaxial diode* Soft recovery characteristicsSpecifications Parameter Symbol Values Unit Mean forward current TC = 90 °C, D = 0.5 IFAV 28 A RMS forward current IFRMS 50 A Surge forward current, sine halfwave, aperiodic IFSM 125 A Tj = 100 °C,...

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BYP 102: Features: * Fast recovery epitaxial diode* Soft recovery characteristicsSpecifications Parameter Symbol Values Unit Mean forward current TC = 90 °C, D = 0.5 IFAV 28 A RMS forward cu...

BYP 102 Data Sheet

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Part Number:
BYP 102
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5000

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Product Details

Description



Features:

* Fast recovery epitaxial diode
* Soft recovery characteristics


Specifications

Parameter Symbol Values Unit
Mean forward current TC = 90 °C, D = 0.5 IFAV 28 A
RMS forward current IFRMS 50A
Surge forward current, sine halfwave, aperiodic IFSM 125A
Tj = 100 °C, f = 50 Hz
Repetitive peak forward current IFRM 280 A
Tj = 100 °C, tp 10 µs
i 2t value Tj = 100 °C, tp = 10 ms i2dt 78A2s
Repetitive peak reverse voltage VRRM 1000 V
Surge peak reverse voltage VRSM 1000 V
Power dissipation TC = 90 °C Ptot 75 W
Chip or operating temperature Tj -40 ... + 150 °C
Storage temperature Tstg -40 ... + 150 °C



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