Features: * Fast recovery epitaxial diode* Soft recovery characteristicsSpecifications Parameter Symbol Values Unit Mean forward current TC = 90 °C, D = 0.5 IFAV 45 A RMS forward current IFRMS 75 A Surge forward current, sine halfwave, aperiodic IFSM 180 A Tj = 100 °C,...
BYP 103: Features: * Fast recovery epitaxial diode* Soft recovery characteristicsSpecifications Parameter Symbol Values Unit Mean forward current TC = 90 °C, D = 0.5 IFAV 45 A RMS forward cu...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter | Symbol | Values | Unit |
Mean forward current TC = 90 °C, D = 0.5 | IFAV | 45 | A |
RMS forward current | IFRMS | 75 | A |
Surge forward current, sine halfwave, aperiodic | IFSM | 180 | A |
Tj = 100 °C, f = 50 Hz | |||
Repetitive peak forward current | IFRM | 400 | A |
Tj = 100 °C, tp 10 µs | |||
i 2t value Tj = 100 °C, tp = 10 ms | i2dt | 162 | A2s |
Repetitive peak reverse voltage | VRRM | 1000 | V |
Surge peak reverse voltage | VRSM | 1000 | V |
Power dissipation TC = 90 °C | Ptot | 115 | W |
Chip or operating temperature | Tj | -40 ... + 150 | °C |
Storage temperature | Tstg | -40 ... + 150 | °C |