Features: • HIGH SPEED SWITCHING• PCHANNEL POWER MOSFET• SEMEFAB DESIGNED AND DIFFUSED• HIGH VOLTAGE (160V & 200V)• HIGH ENERGY RATING• ENHANCEMENT MODE• INTEGRAL PROTECTION DIODE• NCHANNEL ALSO AVAILABLESpecifications BUZ905X4S BUZ906...
BUZ906X4S: Features: • HIGH SPEED SWITCHING• PCHANNEL POWER MOSFET• SEMEFAB DESIGNED AND DIFFUSED• HIGH VOLTAGE (160V & 200V)• HIGH ENERGY RATING• ENHANCEMENT MODE•...
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BUZ905X4S | BUZ906X4S | ||
VDSX | Drain Source Voltage | 160V | 200V |
VGS | Gate Source Voltage |
±14V | |
ID | Continuous Drain Current |
32A | |
ID(PK) | Body Drain Diode |
32A | |
PD | Total Power Dissipation @ Tcase = 25°C |
500W | |
Tstg | Storage Temperature Range |
55 to 150°C | |
Tj | Maximum Operating Junction Temperature |
150°C | |
RJC | Thermal Resistance Junction Case |
0.3°C/W |