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BUZ900DP

Features: • HIGH SPEED SWITCHING• NCHANNEL POWER MOSFET• SEMEFAB DESIGNED AND DIFFUSED• HIGH VOLTAGE (160V & 200V)• HIGH ENERGY RATING• ENHANCEMENT MODE• INTEGRAL PROTECTION DIODE• PCHANNEL ALSO AVAILABLE AS BUZ905DP & BUZ906DP• DOUBLE ...

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SeekIC No. : 004304988 Detail

BUZ900DP: Features: • HIGH SPEED SWITCHING• NCHANNEL POWER MOSFET• SEMEFAB DESIGNED AND DIFFUSED• HIGH VOLTAGE (160V & 200V)• HIGH ENERGY RATING• ENHANCEMENT MODE•...

BUZ900DP Data Sheet

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Part Number:
BUZ900DP
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/12

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Product Details

Description



Features:

• HIGH SPEED SWITCHING
• NCHANNEL POWER MOSFET
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
• HIGH ENERGY RATING
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODE
• PCHANNEL ALSO AVAILABLE AS BUZ905DP & BUZ906DP
• DOUBLE DIE PACKAGE FOR MAXIMUM POWER AND HEATSINK SPACE


Specifications

(Tcase = 25°C unless otherwise stated) BUZ900DP BUZ901DP
VDSX
VGSS
ID
ID(PK)
PD
Tstg
Tj
RJC		 Drain Source Voltage
Gate Source Voltage
Continuous Drain Current
Body Drain Diode
Total Power Dissipation @ Tcase = 25°C
Storage Temperature Range
Maximum Operating Junction Temperature
Thermal Resistance Junction Case		 160V 200V
±14V
16A
16A
250W
55 to 150°C
150°C
0.5°C/W



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