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BUZ906DP

Features: • HIGH SPEED SWITCHING• PCHANNEL POWER MOSFET• SEMEFAB DESIGNED AND DIFFUSED• HIGH VOLTAGE (160V & 200V)• HIGH ENERGY RATING• ENHANCEMENT MODE• INTEGRAL PROTECTION DIODE• NCHANNEL ALSO AVAILABLE AS BUZ900DP & BUZ901DP• DOUBLE ...

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SeekIC No. : 004304997 Detail

BUZ906DP: Features: • HIGH SPEED SWITCHING• PCHANNEL POWER MOSFET• SEMEFAB DESIGNED AND DIFFUSED• HIGH VOLTAGE (160V & 200V)• HIGH ENERGY RATING• ENHANCEMENT MODE•...

BUZ906DP Data Sheet

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Part Number:
BUZ906DP
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

• HIGH SPEED SWITCHING
• PCHANNEL POWER MOSFET
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
• HIGH ENERGY RATING
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODE
• NCHANNEL ALSO AVAILABLE AS BUZ900DP & BUZ901DP
• DOUBLE DIE PACKAGE FOR MAXIMUM POWER AND HEATSINK SPACE


Specifications

(Tcase = 25°C unless otherwise stated) BUZ905DP BUZ906DP
VDSX
VGSS
ID
ID(PK)
PD
Tstg
Tj
RJC		 Drain Source Voltage
Gate Source Voltage
Continuous Drain Current
Body Drain Diode
Total Power Dissipation @ Tcase = 25°C
Storage Temperature Range
Maximum Operating Junction Temperature
Thermal Resistance Junction Case		 -160V -200V
±14V
-16A
-16A
250W
55 to 150°C
150°C
0.5°C/W



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