BUZ73L

MOSFET N-CH 200V 7A

product image

BUZ73L Picture
SeekIC No. : 00161624 Detail

BUZ73L: MOSFET N-CH 200V 7A

floor Price/Ceiling Price

Part Number:
BUZ73L
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/24

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 7 A
Resistance Drain-Source RDS (on) : 0.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 7 A
Resistance Drain-Source RDS (on) : 0.4 Ohms


Features:

• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level



Specifications

Parameter Symbol Values Unit
Continuous drain current
TC =28
ID 7 A
Pulsed drain current
TC = 25
IDpuls 28
Avalanche current,limited by Tjmax IAR 7
Avalanche energy,periodic limited by Tjmax
EAR

6.5

mJ

Avalanche energy, single pulse
ID =7A, VDD =50V, RGS = 25
L=3.67 mH,Tj = 25

EAS 120
Gate source voltage VGS ± 20 V
Power dissipation
TC = 25
Ptot 40 W
Operating temperature Tj -55 ... + 150
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC 3.1 K/W
Thermal resistance, chip to ambient RthJA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56



Parameters:

Technical/Catalog InformationBUZ73L
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C7A
Rds On (Max) @ Id, Vgs400 mOhm @ 3.5A, 5V
Input Capacitance (Ciss) @ Vds 840pF @ 25V
Power - Max40W
PackagingTube
Gate Charge (Qg) @ Vgs-
Package / CaseTO-220AB
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BUZ73L
BUZ73L
BUZ73LIN ND
BUZ73LINND
BUZ73LIN



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Memory Cards, Modules
Audio Products
Optical Inspection Equipment
Undefined Category
Optoelectronics
View more