BUZ70 Selling Leads, Price trend, BUZ70 DataSheet download, circuit diagram from SeekIC.com

Features: • N channel• Enhancement mode• Avalanche-ratedSpecifications Parameter Symbol Values Unit Continuous drain currentTC =33 ID 12 A Pulsed drain currentTC = 25 IDpuls 48 Avalanche current,limited by Tjmax IAR 12 Avalanche energy,periodic limited...

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SeekIC No. : 004304969 Detail

BUZ70: Features: • N channel• Enhancement mode• Avalanche-ratedSpecifications Parameter Symbol Values Unit Continuous drain currentTC =33 ID 12 A Pulsed drain currentTC =...

BUZ70 Data Sheet

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Part Number:: BUZ70
Supply Ability:: 5000

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1~5000

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Upload time: 2024/11/4

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BUZ70L evaluate
Features: • N channel• Enhancement mode• Avalanche-rated• Logic LevelSpeci...
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MOSFET

Product Details

Description

Features:

• N channel
• Enhancement mode
• Avalanche-rated

Specifications

Parameter	Symbol	Values	Unit
Continuous drain current T_C =33	I_D	12	A
Pulsed drain current T_C = 25	I_Dpuls	48
Avalanche current,limited by T_jmax	I_AR	12
Avalanche energy,periodic limited by T_jmax	E_AR	1	mJ
Avalanche energy, single pulse I_D =12A, V_DD = 25 V, R_GS = 25 L =48.6mH, T_j= 25	E_AS	6	mJ
Gate source voltage	V_GS	± 20	V
Power dissipation T_C = 25	P_tot	40	W
Operating temperature	T_j	-55 ... + 150
Storage temperature	T_stg	-55 ... + 150
Thermal resistance, chip case	R_thJC	3.1	K/W
Thermal resistance, chip to ambient	R_thJA	75	K/W
DIN humidity category, DIN 40 040		E
IEC climatic category, DIN IEC 68-1		55 / 150 / 56

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BUZ70

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