MOSFET TO-220 N-CH 50V 30A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 50 V |
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 13 A |
Resistance Drain-Source RDS (on) : | 0.1 Ohms | Configuration : | Single |
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole |
Package / Case : | TO-220 |
BUZ71A | UNITS | ||
Drain to Source Breakdown Voltage (Note 1) | VDS | 50 | V |
Drain to Gate Voltage (RGS = 20k) (Note 1) | VDGR | 50 | V |
Continuous Drain Current, TC = 55 | ID | 13 | A |
Pulsed Drain Current (Note 3) | IDM | 48 | A |
Gate to Source Voltage | VGS | ±20 | V |
Maximum Power Dissipation | PD | 40 | W |
Single Pulse Avalanche Energy Rating (Note 4) | EAS | 100 | mJ |
Linear Derating Factor | 0.32 | W/ | |
Operating and Storage Temperature | TSTG, TJ | -55 to 150 | |
DIN Humidity Category - DIN 40040 | E | ||
IEC Climatic Category - DIN IEC 68-1 | 55/150/56 | ||
Leads at 0.063in (1.6mm) from Case for 10s | TL | 300 | |
Package Body for 10s, See Techbrief 334 | Tpkg | 260 |
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.