Features: • P channel• Enhancement mode• Avalanche ratedSpecifications Parameter Symbol Values Unit Continuous drain currentTC = 26 ID -22 A Pulsed drain currentTC= 25 IDpuls -88 Avalanche energy, single pulseID = -22 A, VDD = -25 V, RGS = 25L =413 mH, Tj ...
BUZ271: Features: • P channel• Enhancement mode• Avalanche ratedSpecifications Parameter Symbol Values Unit Continuous drain currentTC = 26 ID -22 A Pulsed drain currentT...
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Parameter | Symbol | Values | Unit |
Continuous drain current TC = 26 |
ID | -22 | A |
Pulsed drain current TC= 25 |
IDpuls | -88 | |
Avalanche energy, single pulse ID = -22 A, VDD = -25 V, RGS = 25 L =413 mH, Tj = 25 |
EAS | 200 | mJ |
Gate source voltage | VGS | ± 20 | V |
Power dissipation TC = 25 |
Ptot | 125 | W |
Operating temperature | Tj | -55 ... + 150 | |
Storage temperature | Tstg | -55 ... + 150 | |
Thermal resistance, chip case | RthJC | 1 | K/W |
Thermal resistance, chip to ambient | RthJC | 75 | |
DIN humidity category, DIN 40 040 | E | ||
IEC climatic category, DIN IEC 68-1 | 55 / 150 / 56 |